Infineon Technologies Achieves Breakthrough with 20-Micrometer Ultra-Thin Silicon Wafers for Power Semiconductors

Following the introduction of the world’s first 300-millimeter gallium nitride (GaN) power wafer and the opening of the largest 200-millimeter silicon carbide (SiC) power fabrication plant in Kulim, Malaysia, Infineon Technologies AG has reached another significant milestone in semiconductor innovation. The company has successfully developed and processed ultra-thin silicon power wafers, measuring only 20 micrometers thick with a 300-millimeter diameter, in a large-scale semiconductor fab. To put this in perspective, these wafers are a quarter as thick as a human hair and only half the thickness of current high-performance wafers, which range between 40-60 micrometers.

Revolutionary Ultra-Thin Wafers for Energy-Efficient Power Systems

“This achievement demonstrates our commitment to delivering exceptional customer value by advancing the limits of power semiconductor technology,” said Jochen Hanebeck, CEO of Infineon Technologies. “With this breakthrough in ultra-thin wafer technology, we are paving the way for more efficient energy solutions while accelerating progress in key global trends like decarbonization and digitalization. This innovation reinforces our leadership position in the semiconductor industry, as we have mastered all three key materials: silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).”

This new generation of ultra-thin silicon wafers offers substantial improvements in power density, energy efficiency, and system reliability. These benefits are critical for a variety of applications, including AI-driven data centers, motor control systems, and consumer electronics. By reducing the wafer’s thickness, Infineon has lowered substrate resistance by 50%, which in turn decreases power losses by more than 15% compared to conventional silicon wafers. This advancement is particularly valuable for high-end AI servers, which operate at increasing current levels and demand efficient voltage regulation.

In these advanced server applications, power conversion systems must step down voltages from 230 volts to below 1.8 volts for optimal processor operation. Infineon’s ultra-thin wafer technology supports a vertical power delivery design based on trench MOSFET technology. This configuration ensures a close connection between the AI processor and the power delivery system, minimizing power losses and enhancing overall efficiency.

A Game-Changer for AI Data Centers and the Future of Energy Management

Adam White, Division President of Power & Sensor Systems at Infineon, emphasized the importance of energy-efficient solutions for AI infrastructure. “As the demand for AI servers and data centers continues to rise, energy efficiency becomes a top priority. Our ultra-thin wafer technology aligns perfectly with our goal of powering AI systems—from the grid to the processor core—with maximum efficiency,” White stated. “This is a growing market for us, with double-digit growth rates expected. We anticipate our AI-focused business to generate one billion euros in revenue within the next two years.”

Overcoming Technical Challenges in Ultra-Thin Wafer Manufacturing

Achieving a wafer thickness of just 20 micrometers posed significant engineering challenges, requiring Infineon to develop an innovative wafer grinding process. One of the main difficulties arose from the metal layers supporting the chip on the wafer, which are thicker than the wafer itself. This presented challenges in handling, grinding, and processing the wafer’s backside. Additional complications, such as wafer bowing and separation, required precise engineering solutions to maintain stability during assembly and ensure the structural integrity of the wafer.

Building on its existing expertise, Infineon successfully integrated the 20-micrometer wafer technology into its high-volume silicon production lines without adding unnecessary complexity to the manufacturing process. This seamless integration not only ensures high yields but also maintains supply chain security, reflecting Infineon’s commitment to reliable and scalable semiconductor production.

Early Customer Adoption and Future Applications

Infineon’s ultra-thin silicon wafer technology has already been qualified and integrated into its Integrated Smart Power Stages (DC-DC converters), with initial deliveries made to select customers. These power converters highlight Infineon’s ongoing leadership in the semiconductor industry and showcase the company’s extensive patent portfolio around this cutting-edge technology.

The rollout of ultra-thin wafers is expected to accelerate over the next three to four years, gradually replacing conventional wafer technology in low-voltage power converters. This shift will strengthen Infineon’s unique position in the market, leveraging the broadest portfolio of semiconductor products built on silicon, SiC, and GaN technologies. All three materials are essential for advancing decarbonization and digitalization efforts, which are key drivers of future innovation.

Conclusion: Infineon Solidifies Its Leadership in Power Semiconductor Innovation

With the development of 20-micrometer ultra-thin silicon wafers, Infineon Technologies has achieved a groundbreaking advancement in power semiconductor manufacturing. The innovation not only reduces power loss and improves energy efficiency but also aligns with the company’s long-term goals of enabling sustainable energy solutions. This achievement reinforces Infineon’s role as a leader in semiconductor technology and positions the company to meet the growing demands of AI data centers, consumer electronics, and industrial power systems.

FAQs

1. What makes Infineon’s ultra-thin wafers unique?
Infineon’s 20-micrometer wafers are the thinnest silicon wafers ever produced on a large scale. They offer a significant reduction in substrate resistance, lowering power loss by more than 15% compared to conventional wafers.

2. How will the new wafers benefit AI data centers?
The ultra-thin wafers enable more efficient voltage regulation and power delivery to AI processors, helping data centers reduce power loss and improve energy efficiency as energy demands increase.

3. What challenges did Infineon overcome in producing these wafers?
The manufacturing process required innovative grinding techniques to handle the delicate 20-micrometer wafers. Engineers also had to address issues related to wafer bowing and backside processing to ensure stability during assembly.

4. How does this technology fit into Infineon’s overall product portfolio?
Infineon’s ultra-thin wafers complement its extensive product lineup, which includes silicon, SiC, and GaN-based devices. These technologies are crucial for enabling energy-efficient solutions across multiple industries.

5. When will the ultra-thin wafer technology replace conventional wafers?
Infineon expects the transition from traditional wafer technology to ultra-thin wafers to take place over the next three to four years, particularly in low-voltage power converter applications.