STMicroelectronics Introduces Fourth-Generation Silicon Carbide Technology to Drive Innovation in Electric Vehicles and Industrial Applications

STMicroelectronics, a global leader in semiconductors serving a wide range of electronics applications, has unveiled its fourth-generation STPOWER Silicon Carbide (SiC) MOSFET technology. This new generation sets benchmarks in power efficiency, density, and robustness, specifically optimized for traction inverters—crucial components of electric vehicle (EV) powertrains. While serving both automotive and industrial markets, the company is committed to advancing SiC technology with multiple innovations planned through 2027.

Driving the Future of Electric Mobility and Industrial Efficiency

“STMicroelectronics is committed to shaping the future of electric mobility and industrial efficiency with our state-of-the-art silicon carbide technology,” said Marco Cassis, President of the Analog, Power & Discrete, MEMS, and Sensors Group at STMicroelectronics. “Our continued advancements in SiC MOSFET technology, together with innovations in advanced packaging and power modules, are delivering industry-leading SiC performance and supply chain resilience. This commitment meets the growing needs of our customers and supports a more sustainable future.”

SiC Technology: The Key to High Efficiency and Power Density

As the market leader in SiC power MOSFETs, STMicroelectronics is driving innovation to leverage SiC’s advantages over traditional silicon devices, offering higher efficiency and greater power density. The fourth-generation SiC devices are designed to meet the requirements of next-generation EV traction inverter platforms, with significant advances in size and energy-saving potential. The EV market, while growing rapidly, still faces challenges to achieve widespread adoption, particularly in creating more affordable vehicles.

SiC-based 800V EV bus drive systems have enabled faster charging and reduced vehicle weight, giving premium models longer driving ranges. ST’s new SiC MOSFET devices, available in 750V and 1200V classes, will improve the energy efficiency and performance of both 400V and 800V EV traction inverters, bringing these benefits to mid-size and compact EVs. This is key to achieving mass market adoption of electric vehicles. Beyond EVs, the new generation of SiC technology is ideal for high-power industrial applications, including solar inverters, energy storage systems, and datacenters, delivering significant energy efficiency improvements.

Availability Timeline

STMicroelectronics has completed the qualification of its 750V SiC technology platform and expects to finalize qualification of the 1200V class by the first quarter of 2025. Following this, commercial availability of devices with nominal voltage ratings of 750V and 1200V will enable designers to develop applications ranging from standard AC-line voltages to high-voltage EV batteries and chargers.

Applications and Use Cases

ST’s Generation 4 SiC MOSFETs offer enhanced efficiency, smaller components, reduced weight, and extended driving ranges compared to traditional silicon solutions. These features are essential for encouraging the widespread adoption of electric vehicles. Leading EV manufacturers are actively collaborating with ST to integrate Generation 4 SiC technology into their vehicles, aiming to improve both performance and energy efficiency.

While traction inverters in EVs are the primary application, the fourth-generation SiC MOSFETs are also suitable for high-power industrial motor drives. These devices enhance switching performance and robustness, resulting in more efficient and reliable motor control, reducing energy consumption and operating costs. In renewable energy applications, the technology increases the efficiency of solar inverters and energy storage systems, contributing to more sustainable and cost-effective energy solutions. Additionally, SiC MOSFETs can be employed in datacenter power supplies, where their high efficiency and compact size are essential for addressing the significant power demands and thermal management challenges associated with AI-driven workloads.

Roadmap for SiC Innovation

STMicroelectronics is accelerating the development of SiC power devices through its vertically integrated manufacturing strategy, working on multiple SiC technology innovations in parallel to advance power device technologies over the next three years. The upcoming fifth generation of ST’s SiC power devices will introduce high-power density technology based on a planar structure. Additionally, the company is working on a radical innovation that promises exceptional on-resistance (RDS(on)) values at high temperatures, significantly reducing RDS(on) compared to existing SiC technologies.

Upcoming Industry Event

STMicroelectronics will participate in ICSCRM 2024, the leading annual conference focused on the latest achievements in SiC and other wide bandgap semiconductors. The event, taking place from September 29 to October 4, 2024, in Raleigh, North Carolina, will feature ST’s technical presentations and an industrial keynote on the “High volume industrial environment for leading-edge technologies in SiC.”

For more details, visit: ICSCRM 2024 – STMicroelectronics.

ST’s ongoing advancements in SiC technology highlight its commitment to driving innovation in both electric mobility and industrial applications, contributing to a more energy-efficient and sustainable future.