STMicroelectronics Introduces Hybrid Page EEPROM for Low-Power, Compact Applications
Hybrid Page EEPROM ensures 100-year data retention, meeting the needs of products requiring long-lasting performance.
STMicroelectronics has unveiled its new Page EEPROM, a hybrid memory solution that combines the power efficiency and durability of EEPROM with the speed and capacity of Flash memory. This innovative memory technology is designed for applications with extreme size and power constraints, making it ideal for wearables, IoT devices, and other embedded systems.
Meeting Evolving Storage Demands in Embedded Systems
As embedded applications become more sophisticated and require greater data storage—particularly for edge AI algorithms—ST’s Page EEPROM offers a solution that enhances efficiency without compromising on size. Behind-the-ear hearing aids are one such example, where the memory helps reduce the bill of materials, leading to sleeker, more comfortable designs.
Page EEPROM is also well-suited for healthcare devices, asset tracking systems, e-bikes, and other consumer or industrial products. “The evolution of the intelligent edge is driving new demands for memory storage density, performance, and power efficiency,” explained Philippe Ganivet, product line manager at STMicroelectronics. “Our Page EEPROM provides ultra-low power performance, making it an excellent companion for microcontrollers in battery-operated IoT modules.”
Performance Validation and Use Cases
BitFlip Engineering, an early adopter of ST’s Page EEPROM, has already integrated the memory into its GPS trackers and IoT devices. “This memory allowed us to meet ambitious performance targets,” said Patrick Kusbel, owner of BitFlip Engineering. “The M95P series delivers exceptional performance—up to 50 times faster, consuming just a tenth of the power, and offering five times the reliability compared to previous solutions.” With 500,000 write cycles compared to the industry-standard 100,000, it is a significant improvement over conventional EEPROMs.
Features of the Page EEPROM Family
The Page EEPROM family is available in 8Mbit, 16Mbit, and 32Mbit densities, offering greater storage capacity than traditional EEPROMs. It supports byte-level writes for efficient data logging, as well as page/sector/block erase operations for faster firmware updates via over-the-air (OTA) programming. With buffer loading functionality, multiple pages can be programmed simultaneously, reducing software installation time during production.
The memory’s data-read speed reaches 320 Mbit/s, approximately 16 times faster than standard EEPROM. Additionally, write-cycle endurance of 500,000 cycles ensures long-term reliability. To address power concerns, the device uses peak-current control, minimizing noise and extending battery life. It also includes a deep power-down mode with a quick wake-up function, drawing less than 1µA of current.
Built for Long-Term Reliability
Page EEPROM ensures 100-year data retention, meeting the needs of products requiring long-lasting performance. It is also part of ST’s 10-year product longevity program, which guarantees long-term availability for customers.
Development Tools and Availability
For developers interested in adopting this technology, ST offers the X-NUCLEO-PGEEZ1 expansion board and X-CUBE-EEPRMA1 software package. These tools allow users to explore the hybrid memory architecture and quickly build proof-of-concept applications. The software package includes a demonstration to facilitate rapid testing and integration.
The M95P08 (8Mbit), M95P16 (16Mbit), and M95P32 (32Mbit) Page EEPROMs are now in production, with the M95P08 priced from $0.50. The X-NUCLEO-PGEEZ1 expansion board is available through the eSTore for $40.00.
For more information, visit www.st.com/page-eeprom.
